GaAs metamorphic HEMT (MHEMT): An attractive alternative to InP HEMTs for high performance low noise and power applications

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作者：
Whelan, C.S. [1 ]
Marsh, P.F. [1 ]
Hoke, W.E. [1 ]
McTaggart, R.A. [1 ]
McCarroll, C.P. [1 ]
Kazior, T.E. [1 ]
机构：
[1] Raytheon RF Components, Andover, United States
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
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页码：337 / 340
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