Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (a prospect for free-orientation integration)

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Hitachi, Ltd, Tokyo, Japan ^{[1
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Appl Phys Lett | / 6卷 / 810-812期

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[1] FABRICATION OF (001)-INP-BASED 1.55-MU-M WAVELENGTH LASERS ON A (110)-GAAS SUBSTRATE BY DIRECT BONDING (A PROSPECT FOR FREE-ORIENTATION INTEGRATION)
OKUNO, Y
AOKI, M
TSUCHIYA, T
UOMI, K
APPLIED PHYSICS LETTERS, 1995, 67 (06) : 810 - 812
[2] ANTIPHASE DIRECT BONDING AND ITS APPLICATION TO THE FABRICATION OF INP-BASED 1.55-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES
OKUNO, Y
UOMI, K
AOKI, M
TANIWATARI, T
SUZUKI, M
KONDOW, M
APPLIED PHYSICS LETTERS, 1995, 66 (04) : 451 - 453
[3] Direct water bonding of a (001) InP-based strained multiple quantum well on a (110) Si substrate with a GaAs buffer layer, aligning cleavage planes of InP and Si
Okuno, Y
Tamura, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (12B): : L1652 - L1654