Development of poly-Si TFT in NEC

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作者
Okumura, Fujio
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来源
NEC Research and Development | 1999年 / 40卷 / 04期
关键词
Excimer lasers - Image sensors - Liquid crystal displays - Low temperature properties - Plasma enhanced chemical vapor deposition - Polycrystalline materials;
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摘要
This paper is an introduction to a group of five papers on poly-Si Thin Film Transistor (TFT) research and development within NEC. Poly-Si TFT is a core technology for next generation LCDs (Liquid Crystal Displays), sensors and other application devices. Especially, low temperature poly-Si TFTs are very promising because of their wide application range. NEC Corporation has been conducting research of low temperature poly-Si process such as excimer laser process technology including annealing and doping, process temperature lowering by RPCVD (Remote Plasma-Enhanced Chemical Vapor Deposition), and development of many kinds of input/output devices, especially light valves and novel pen-shaped scanner. Future research would create a new market by developing plastic substrate compatible process and single crystalline silicon on a glass substrate.
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页码:424 / 428
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