Substitutional C incorporation into Si1-yCy alloys using novel carbon source, 1,3-disilabutane

被引：0

作者：

Yagi, Shuhei ^{[1
]}

Abe, Katsuya ^{[1
]}

Yamada, Akira ^{[2
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

[2] Res. Ctr. Quant. Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 7 A期

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页码：4153 / 4154