GaAs/AlAs and AlAs/GaAs interface formation process studied by coaxial impact-collision ion scattering spectroscopy: Comparison between alternating and simultaneous source supply

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作者：

机构：

[1] Saitoh, Tohru

[2] Palmer, Joyce E.

[3] Tamura, Masao

来源：

Saitoh, Tohru | 1600年 / 32期

关键词：

Drop formation - Heterojunctions - Interfaces (materials) - Ion beams - Ions - Molecular beam epitaxy - Scattering - Segregation (metallography) - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Spectroscopic analysis - Surfaces;

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摘要：

Real time observation of GaAs/AlAs and AlAs/GaAs heterointerface formation by molecular beam epitaxy with an alternating source supply and a conventional simultaneous source supply has been performed using coaxial impact-collision ion scattering spectroscopy. A He+ ion beam of 2 keV was incident on the sample surface and the scattering intensity from Ga and As atoms was measured in situ while Ga (Al) and As4 beams were alternately or simultaneously irradiated on the AlAs (GaAs) surface. The time-resolved variations in the scattering intensity show the behavior of Ga atoms in relation to droplet formation and surface segregation when growth is carried out by an alternating source supply, while the intensity variations are consistent with a simple layer-by-layer growth process in the case of simultaneous source supply.

引用

共 13 条

[1] GAAS/ALAS AND ALAS/GAAS INTERFACE FORMATION PROCESS STUDIED BY COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY - COMPARISON BETWEEN ALTERNATING AND SIMULTANEOUS SOURCE SUPPLY
SAITOH, T
PALMER, JE
TAMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (4A): : L476 - L479
[2] REAL-TIME OBSERVATION OF ALAS/GAAS SUPERLATTICE GROWTH BY COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY
SUGIYAMA, N
HASHIMOTO, A
TAMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9A): : L1576 - L1578
[3] INSITU CHARACTERIZATION OF THE INITIAL GROWTH STAGE OF GAAS ON SI BY COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY
HASHIMOTO, A
SUGIYAMA, N
TAMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3755 - 3758
[4] AL/GA ATOM-EXCHANGE DURING ALAS/GAAS HETEROINTERFACE FORMATION IN ALTERNATING SOURCE SUPPLY
SAITOH, T
TAMURA, M
PALMER, JE
COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 345 - 350
[5] SURFACE AND INTERFACE STRUCTURAL CONTROL USING COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY (CAICISS)
KATAYAMA, M
NAKAYAMA, T
MCCONVILLE, CF
AONO, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4): : 598 - 601
[6] Observations of anomalous droplet formation during the molecular beam epitaxy of AlAs on GaAs (111)B surfaces with an alternating source supply
Morishita, Yoshitaka
Goto, Shigeo
Nomura, Yasuhiko
Isu, Toshiro
Katayama, Yoshifumi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (2 B): : 222 - 225
[7] OBSERVATIONS OF ANOMALOUS DROPLET FORMATION DURING THE MOLECULAR-BEAM EPITAXY OF ALAS ON GAAS (111)B SURFACES WITH AN ALTERNATING SOURCE SUPPLY
MORISHITA, Y
GOTO, S
NOMURA, Y
ISU, T
KATAYAMA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L222 - L225
[8] STRUCTURAL-ANALYSIS OF THE CAF2/SI(111) INTERFACE BY COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY (CAICISS)
KATAYAMA, M
KING, BV
NOMURA, E
AONO, M
VACUUM, 1991, 42 (04) : 321 - 321
[9] STRUCTURE-ANALYSIS OF THE CAF2/SI(111) INTERFACE IN ITS INITIAL-STAGE OF FORMATION BY COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY (CAICISS)
KATAYAMA, M
KING, BV
NOMURA, E
AONO, M
PROGRESS OF THEORETICAL PHYSICS SUPPLEMENT, 1991, (106): : 315 - 320
[10] REAL-TIME OBSERVATION OF THE COMPOSITION VARIATION DUE TO IN-GA REPLACEMENTS AT THE GAAS/INAS INTERFACE BY COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY
SAITOH, T
HASHIMOTO, A
TAMURA, M
APPLIED SURFACE SCIENCE, 1992, 60-1 : 228 - 233

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