Strictly resonant excitation of carriers in self-assembled InAs/GaAs quantum dots

被引：0
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作者：
Paillard, M. [1 ]
Marie, X. [1 ]
Vanelle, E. [1 ]
Amand, T. [1 ]
Kalevich, V.K. [2 ]
Ustinov, V.M. [2 ]
Ledentsov, N.N. [2 ]
机构：
[1] Lab. Phys. de la Matiere Condensee, INSA-CNRS, Complexe Scientifique de Rangueil, F-31077 Toulouse Cedex, France
[2] A.F. Ioffe Phys.-Technical Institute, 194021 St. Petersburg, Russia
来源：
Physica Status Solidi (A) Applied Research | 2000年 / 178卷 / 01期
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摘要：
13
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页码：349 / 353
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