MAGNETORESISTANCE OF THIN BISMUTH FILMS.

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作者：

Okun, I.Z.

Fraiman, B.S.

Chudnovskii, A.F.

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| 1600年 / 06期

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摘要：

The magnetoresistance of bismuth films having the most perfect structure attainable was studied as a function of thickness in a weak field. Measurements were made for thicknesses ranging from 0. 2 to 20 mu and for three mutually perpendicular directions of the magnetic field relative to the sample. The magnetic induction was taken in the 100-350 G range for sample temperatures between 77 and 290 K.

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