Epitaxial Α-Be3N3 Films Analyzed in Situ by AES, XPS, and EELS

被引：1

作者：

Hernández, Wencel De La Cruz ^{[1
]}

Hernández, Jesus Díaz ^{[1
]}

Soto, Gerardo ^{[1
]}

机构：

[1] Centro de Ciencias de la Materia Condensada-UNAM, FisicoquÃmica Dept., Km. 107 Carretera, Tijuana-Ensenada

来源：

Surface Science Spectra | 2003年 / 10卷 / 01期

关键词：

Auger electron - Electron energy loss - Growth systems - Lasers ablations - Molecular nitrogen - Nitrogen ambient - Photoelectron energy - Silicon substrates - Spectroscopic data - X-ray photoelectrons;

D O I：

10.1116/11.20031102

中图分类号：

学科分类号：

摘要：

In situ Auger electron, x-ray photoelectron, and electron energy loss spectroscopic data were obtained on epitaxial Α-Be3N3layers grown on (111) and (100) silicon substrates. Films were grown by laser ablating a beryllium foil in molecular nitrogen ambient at 750 °C. The ultrahigh vacuum laser ablation growth system is attached to an analysis chamber equipped with an e-gun, an x-ray source (dual anode Mn/Al), and an electron analyzer MAC-3, all from CAMECA. The spectra show that the film surface is free of impurities, except for traces, of oxygen. Quantitative XPS analysis for the film yields 61, 35, and 4 at % for beryllium, nitrogen, and oxygen concentrations, respectively. © 2004 American Vacuum Society.

引用

页码：14 / 20

页数：6