Effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy

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[1] Redwing, J.M.
[2] Nayak, S.
[3] Savage, D.E.
[4] Lagally, M.G.
[5] Dawson-Elli, D.F.
[6] Kuech, T.F.
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Redwing, J.M. | 1600年 / Elsevier Science B.V., Amsterdam, Netherlands卷 / 145期
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Semiconductor superlattices;
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