Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

被引：0

作者：

Liu, Zhengxin ^{[1
]}

Suzuki, Yasuhito ^{[1
]}

Osamura, Masato ^{[1
]}

Ootsuka, Teruhisa ^{[1
]}

Mise, Takahiro ^{[1
]}

Kuroda, Ryo ^{[2
,4
]}

Tanoue, Hisao ^{[2
]}

Makita, Yunosuke ^{[2
]}

Wang, Shinan ^{[3
]}

Fukuzawa, Yasuhiro ^{[3
]}

Otogawa, Naotaka ^{[3
]}

Nakayama, Yasuhiko ^{[3
]}

机构：

[1] System Engineers' Company, Limited, Yamato, Kanagawa 242-0001, Japan

[2] Natl. Inst. Adv. Indust. Sci./T., AIST Tsukuba Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

[3] Japan Sci./Technology Corporation, AIST Tsukuba West, Onogawa 16-1, Tsukuba, Ibaraki 305-8569, Japan

[4] Nippon Institute of Technology, Saitama 345-8501, Japan

来源：

Journal of Applied Physics | 2004年 / 95卷 / 08期

关键词：

Annealing - Defects - Diffusion - Epitaxial growth - Grain boundaries - High temperature effects - Iron compounds - Kinetic energy - Leakage currents - Light emitting diodes - Multilayers - Raman scattering - Reduction - Scanning electron microscopy - Sputtering - Transmission electron microscopy;

D O I：

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中图分类号：

学科分类号：

摘要：

High-quality β-FeSi2 films were fabricated by the facing-target sputtering (FTS) method. It was found that an epitaxial thin β-FeSi2 template buffer layer performed on Si substrate was essential for the epitaxial growth of thick β-FeSi2 film. The mechanism for reducing Fe diffusion into Si was also discussed with respect to the dependence of the β-FeSi2 epitaxial growth temperature on the thickness, the stability of the compound and features of Fe diffusion in Si. The results indicate that a template layer for the growth of thick β-FeSi2 layers is useful for obtaining β-FeSi 2/Si heterojunctions for photosensor and thin film solar cell applications.

引用

页码：4019 / 4024