Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

被引：0

作者：

Liu, Rong-Chau ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Chung Shan Inst of Science and, Technology, Tao-Yuan, Taiwan

来源：

Microelectronics Reliability | 1998年 / 38卷 / 03期

关键词：

Composition effects - Semiconductor device manufacture - Semiconductor device testing - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated.

引用

页码：367 / 372