Fabrication of silicon field emitter arrays with 0.1-μm-diameter gate by focused ion beam lithography

被引：0
|
作者：
Yamaoka, Yoshikazu [1 ]
Goto, Takashi [1 ]
Nakao, Masao [1 ]
Kanemaru, Seigo [1 ]
Itoh, Junji [1 ]
机构：
[1] Sanyo Electric Co, Ltd, Ibaraki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 12 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：6932 / 6934
相关论文
共 38 条
  • [1] Fabrication of silicon field emitter arrays with o.1-mu m-diameter gate by focused ion beam lithography
    Yamaoka, Y
    Goto, T
    Nakao, M
    Kanemaru, S
    Itoh, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6932 - 6934
  • [2] Fabrication of 0.1 μm gate aperture Mo-tip field-emitter arrays using interferometric lithography
    Choi, JO
    Jeong, HS
    Pflug, DG
    Akinwande, AI
    Smith, HI
    APPLIED PHYSICS LETTERS, 1999, 74 (20) : 3050 - 3052
  • [3] Electron Beam Characterization of Double Gate Field Emitter Arrays Fabricated by a Focused Ion Beam Assisted Process
    Helfenstein, Patrick
    Jefimovs, Konstantins
    Kirk, Eugenie
    Escher, Conrad
    Fink, Hans-Werner
    Tsujino, Soichiro
    2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2012, : 304 - +
  • [4] Fabrication process of field emitter arrays using focused ion and electron beam induced reaction
    Ochiai, C
    Yavas, O
    Takai, M
    Hosono, A
    Okuda, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (03): : 933 - 935
  • [5] Focused ion beam processing of metal gated field emitter arrays
    Ochiai, C
    Yavas, O
    Takai, M
    Hosono, A
    Okuda, S
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 821 - 824
  • [6] Fabrication of silicon field emitter arrays integrated with beam focusing lens
    Yamaoka, Yoshikazu
    Kanemaru, Seigo
    Itoh, Junji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (12 B): : 6347 - 6695
  • [7] Fabrication of silicon field emitter arrays integrated with beam focusing lens
    Yamaoka, Y
    Kanemaru, S
    Itoh, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B): : 6626 - 6628
  • [8] Fabrication and characterization of p-type silicon field-emitter arrays for lithography
    Teepen, TF
    van Veen, AHV
    van't Spijker, H
    Steenbrink, SWHK
    van Zuuk, A
    Heerkens, CTH
    Wieland, MJ
    van Druten, NJ
    Kruit, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (02): : 359 - 369
  • [9] Maskless fabrication of field-emitter array by focused ion and electron beam
    Yavas, O
    Ochiai, C
    Takai, M
    Hosono, A
    Okuda, S
    APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3319 - 3321
  • [10] FABRICATION AND CHARACTERIZATION OF ELECTRON-BEAM EVAPORATED SILICON FIELD EMITTER ARRAYS
    MYERS, GP
    ASLAM, M
    KLIMECKY, P
    CATHEY, LW
    ELDER, RE
    ARTZ, BE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 642 - 646
1234