Fabrication of thin-film varistors using sputtering technique

被引：0
|
作者：
Yano, Yoshihiko [1 ]
Morooka, Hisao [1 ]
机构：
[1] TDK Corp, Ichikawa-shi, Japan
来源：
Journal of the Ceramic Society of Japan. International ed. | 1994年 / 102卷 / 03期
关键词：
Ceramic materials - Electric properties - Electron energy levels - Grain boundaries - Interfaces (materials) - Schottky barrier diodes - Semiconducting films - Semiconducting zinc compounds - Semiconductor device manufacture - Semiconductor metal boundaries - Sputtering - Thin film devices;
D O I：
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学科分类号：
摘要：
Sputtering technique was applied to fabricate nearly perfect double Schottky barrier as a model of a single grain boundary in a ceramic varistor. Donor density of ZnO and interface states were controlled in the ZnO(Al)/ZnO(Co)/PrCoOx/ZnO(Co)/ZnO(Al) structure. In this multilayered thin-film varistor, the symmetric voltage-current (V-I) characteristics (breakdown-voltage approximately 6V, α = 31) in bias directions were obtained. From the deep-level transient spectroscopy (DLTS) measurements, the interface state of 0.61 eV was detected.
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页码：303 / 306
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