Wet thermal oxidation of AlxGa1-xAs compounds

被引:0
|
作者
机构
来源
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Electron scattering by optical phonons in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells
    Zianni, X
    Simserides, CD
    Triberis, GP
    PHYSICAL REVIEW B, 1997, 55 (24): : 16324 - 16330
  • [22] GAMMA-X MIXING IN GAAS ALXGA1-XAS AND ALXGA1-XAS ALAS SUPERLATTICES
    TING, DZY
    CHANG, YC
    PHYSICAL REVIEW B, 1987, 36 (08): : 4359 - 4374
  • [23] Amorphization mechanisms in AlxGa1-xAs
    Lagow, BW
    Turkot, BA
    Robertson, IM
    Rehn, LE
    Baldo, PM
    Roh, SD
    Forbes, DV
    Coleman, JJ
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 199 - 204
  • [24] THE MOVPE GROWTH OF ALXGA1-XAS
    RAUBENHEIMER, D
    LEITCH, AWR
    VERMAAK, JS
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (07) : 322 - 326
  • [25] Carbon implantation in AlxGa1-xAs
    Pearton, SJ
    Abernathy, CR
    APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1793 - 1795
  • [26] LONGITUDINAL PIEZORESISTANCE OF ALXGA1-XAS
    MCGRODDY, JC
    LORENZ, MR
    SMITH, JE
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1852 - &
  • [27] PHOTOREFLECTANCE SPECTRA IN ALXGA1-XAS
    BERNINGE.WH
    REDIKER, RH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 305 - &
  • [28] ALXGA1-XAS HETEROSTRUCTURES FOR OPTOELECTRONICS
    PANISH, MB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (06): : 806 - 806
  • [29] Amorphization mechanisms in AlxGa1-xAs
    Lagow, BW
    Turkot, BA
    Robertson, IM
    Rehn, LE
    Baldo, PM
    Roh, SD
    Forbes, DV
    Coleman, JJ
    MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 197 - 202
  • [30] OMVPE GROWTH OF ALXGA1-XAS
    STRINGFELLOW, GB
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 42 - 52