Wet thermal oxidation of AlxGa1-xAs compounds

被引:0
|
作者
机构
来源
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] WET THERMAL-OXIDATION OF ALXGA1-XAS COMPOUNDS
    BURTON, RS
    SCHLESINGER, TE
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5503 - 5507
  • [2] Wet oxidation of AlxGa1-xAs: Arsenic barriers on the road to MIS
    Ashby, CIH
    Sullivan, JP
    Newcomer, PP
    Missert, NA
    Hou, HQ
    Hammons, BE
    Baca, AG
    PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI), 1997, 97 (01): : 58 - 65
  • [3] Lateral oxidation of buried AlxGa1-xAs layers in a wet ambient
    Langenfelder, T
    Schroder, S
    Grothe, H
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) : 3548 - 3551
  • [4] Detailed experimental study of the wet oxidation kinetics of AlxGa1-xAs layers
    1600, American Inst of Physics, Woodbury, NY, USA (78):
  • [5] Structure-induced effects on the selective wet thermal oxidation of digital AlxGa1-xAs alloys
    Suarez, I.
    Conde, M.
    Bouscayrol, L.
    Fontaine, C.
    Almuneau, G.
    JOURNAL OF MATERIALS RESEARCH, 2008, 23 (11) : 3006 - 3012
  • [6] Modeling the Lateral Wet Oxidation of AlxGa1-xAs into Arbitrary Mesa Geometries
    Alfaro-Bittner, K.
    Rojas, R. G.
    Lafleur, G.
    Calvez, S.
    Almuneau, G.
    Clerc, M. G.
    Barbay, S.
    PHYSICAL REVIEW APPLIED, 2019, 11 (04)
  • [7] ANODIC-OXIDATION OF ALXGA1-XAS
    YU, J
    AOYAGI, Y
    IWAI, S
    TOYODA, K
    NAMBA, S
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1895 - 1896
  • [8] A DETAILED EXPERIMENTAL-STUDY OF THE WET OXIDATION-KINETICS OF ALXGA1-XAS LAYERS
    NICKEL, H
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) : 5201 - 5203
  • [9] Thermal reactions of Pd/AlxGa1-xAs contacts
    Chuang, HF
    Lee, CP
    Tsang, JS
    Fan, JC
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (05) : 2891 - 2895
  • [10] Oxidation characteristics of AlxGa1-xAs layer sandwiched between AlxGa1-xAs/GaAs multiple-layer heterostructures
    Inst of Semiconductors, the Chinese Acad of Sciences, Beijing, China
    Pan Tao Ti Hsueh Pao, 10 (791-795):