共 50 条
- [1] Chemical dry etching of silicon nitride and silicon dioxide using CF4/O-2/N-2 gas mixturesJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (05): : 2802 - 2813Kastenmeier, BEEMatsuo, PJBeulens, JJOehrlein, GS
- [2] DRY ETCHING OF SILICON AND ITS COMPOUNDS WITH CF4 AND N2O GAS-MIXTURESJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C312 - C312LIU, MDWANG, XMA, TP
- [3] Delineation of MEMS microstructures in silicon using CF4/O2 gas mixtures in reactive ion etchingNANO- AND MICROTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS, 2002, 4936 : 93 - 97Paul, AKDimri, AKBajpai, RP
- [4] Enhancement of etch rate by the addition of O2 and Ar in chemical dry etching of Si using a discharge flow of Ar/CF4 and CF4/O2 gas mixturesJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4A): : 2440 - 2446Tsuji, MOkano, STanaka, ANishimura, Y
- [5] MODELING OF SILICON ETCHING IN CF4/O2 AND CF4/H2 PLASMASJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2280 - 2290VENKATESAN, SPTRACHTENBERG, IEDGAR, TF
- [6] Investigation of the etching mechanism of silicon nitride by CF4/O2/Ar gas mixture plasma in ICPVACUUM, 2025, 233Gong, LiyueLuo, QianTan, ZiyanLi, ChanLi, NaWang, XinjieGao, FeiLiu, YongxinBi, ZhenhuaMei, Xianxiu
- [7] Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixturesJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04): : 2047 - 2056Kastenmeier, BEEMatsuo, PJOehrlein, GSLangan, JG
- [8] Comparison of models for silicon etching in CF4 + O2 plasmaVACUUM, 2012, 86 (12) : 1964 - 1968Knizikevicius, R.
- [9] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICONAPPLIED PHYSICS LETTERS, 1988, 52 (14) : 1170 - 1172OEHRLEIN, GSROBEY, SWLINDSTROM, JL
- [10] Effect of a magnetic field on the rate of etching of silicon dioxide in a CF4 + O2 plasmaTechnical Physics, 2009, 54 : 907 - 911Yu. P. Snitovskii
