Dependence of the width of a δ-impurity layer on position in an InxGa1-xAs/GaAs strained quantum well

被引：0
|
作者：
Notari, A.C. [1 ]
Schrappe, B. [1 ]
Basmaji, P. [1 ]
Hipolito, O. [1 ]
机构：
[1] Univ de Sao Paulo, Sao Carlos, Brazil
来源：
Physica Status Solidi (A) Applied Research | 1991年 / 126卷 / 02期
关键词：
Heat Treatment - Annealing - Semiconducting Gallium Arsenide - Doping - Semiconductor Devices - Heterojunctions;
D O I：
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学科分类号：
摘要：
We have investigated the electric properties of Si delta-doped CaAs/InGaAs/GaAs quantum well structures. The widths of capacitance-voltage profiles were found to be dependent on the impurity position in quantum well structures. The effect of Si segregation under annealing experiments has been evaluated.
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