Light-emitting devices in industrial CMOS technology

被引：0
|
作者：
Kramer, J. [1 ]
Seitz, P. [1 ]
Steigmeier, E.F. [1 ]
Auderset, H. [1 ]
Delley, B. [1 ]
Baltes, H. [1 ]
机构：
[1] Paul Scherrer Inst Zurich, Zurich, Switzerland
来源：
Sensors and Actuators, A: Physical | 1993年 / 37-38卷 / 02期
关键词：
Highly interdigitated pn structure integration;
D O I：
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学科分类号：
摘要：
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页码：527 / 533
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