Relationship between grown-in defects in Czochralski silicon crystals

被引：0

作者：

Umeno, Shigeru ^{[1
]}

Okui, Masahiko ^{[1
]}

Hourai, Masataka ^{[1
]}

Sano, Masakazu ^{[1
]}

Tsuya, Hideki ^{[1
]}

机构：

[1] Sumitomo Sitix Corp, Saga, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 5 B期

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摘要：

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[21] Formation of microscopic distribution of grown-in defects in Czochralski silicon crystal [J].

Habu, R ;

Kawakami, K ;

Hasebe, M .

SOLID STATE PHENOMENA, 1997, 57-8 :27-35

[22] Grown-in defects in heavily boron-doped Czochralski silicon [J].

Yu, XG ;

Ma, XY ;

Li, CL ;

Yang, JS ;

Yang, DR .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A) :4082-4086

[23] Effect of the Ingot Cooling on the Grown-in Defects in Silicon Czochralski Growth [J].

Sim, Bok-Cheol ;

Jung, Yo-Han ;

Lee, Hong-Woo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (10) :1055031-1055034

[24] Formation of grown-in defects during Czochralski silicon crystal growth [J].

Nishikawa, H ;

Tanaka, T ;

Yanase, Y ;

Hourai, M ;

Sano, M ;

Tsuya, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11) :6595-6600

[25] The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals [J].

Porrini, M. ;

Voronkov, V. V. ;

Falster, R. .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3) :185-188

[26] EFFECTS OF GROWN-IN HYDROGEN ON LIFETIME OF CZOCHRALSKI SILICON-CRYSTALS [J].

HARA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10) :5483-5488

[27] A new method for transmission electron microscope observation of grown-in defects in As-grown Czochralski silicon (111) crystals [J].

Yanase, Y ;

Ono, T ;

Kitamura, T ;

Horie, H ;

Ochiai, T ;

Okamoto, S ;

Tsuya, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10) :6200-6203

[28] Analysis of grown-in defects in Czochralski Si [J].

Itsumi, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) :1-6

[29] The direct observation of grown-in laser scattering tomography defects in Czochralski silicon [J].

Nishimura, M ;

Yoshino, S ;

Motoura, H ;

Shimura, S ;

Mchedlidze, T ;

Hikone, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (10) :L243-L246

[30] Shrinkage of grown-in defects in Czochralski silicon during thermal annealing in vacuum [J].

Ueki, T ;

Itsumi, M ;

Takeda, T ;

Yoshida, K ;

Takaoka, A ;

Nakajima, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (7A) :L771-L773

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