Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry

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Tampere Univ of Technology, Tampere, Finland ^{[1
]}

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来源：

Appl Phys Lett | / 15卷 / 2197-2199期

关键词：

Calculations - Fabrication - Magnesium compounds - Molecular beam epitaxy - Optical properties - Reflectometers - Semiconducting gallium arsenide - Structure (composition) - Thickness control - X ray diffraction - Zinc compounds;

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摘要：

Ten- and 20-period MgZnSSe/ZnSSe distributed Bragg reflectors at blue-green wavelengths were grown by molecular beam epitaxy (MBE) and their optical and structural properties are studied. Instabilities often related to growth of these materials were almost completely surpassed by using in situ optical reflectometry for the measurement of n/4n layer thickness during growth. A maximum reflectance of 86% was obtained for the 20-period period reflector. Results show that the MBE technique combined with optical reflectometry is suitable for direct growth of vertical cavity surface emitting lasers (VCSFLs) and other microcavity devices which are based on II-VI compound semiconductors.

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