STUDY OF THE RECOVERY PROCESS OF THE p-n-p-n STRUCTURE.

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作者：

Togatov, V.V.

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来源：

| 1600年 / 17期

关键词：

P-N-P-N STRUCTURES - RECOVERY PROCESS;

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摘要：

On the basis of the solution of the continuity equation for the n-type base region the minority carrier density distribution is analyzed in this paper. The last phase of recovery of the p-n-p-n structure, when the emitter junction adjacent to the n-base is biased in the reverse direction, is examined.

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