MILLIMETRE-WAVE FREQUENCY DOUBLERS USING GaAs MESFETS.

被引:0
|
作者
Evans, D.H.
机构
关键词
GALLIUM ARSENIDE MESFETS - MILLIMETER-WAVE FREQUENCY DOUBLERS;
D O I
暂无
中图分类号
学科分类号
摘要
When it is used as a frequency doubler, the GaAs MESFET will give a second harmonic conversion gain of typically 6 db less than its fundamental. Consequently a device with a realizable fmax of 50 GHz should give a 0 db conversion gain at about 25 GHz. Therefore the combination of a Ku-band FET oscillator plus a FET frequency doubler having a few dbs conversion loss should be capable of producing more power than a fundamental Ka-band oscillator. This article describes the performance of a pair of 15 to 30 GHz balanced frequency doublers. Both use the same 0. 3 mu m gate-length devices though the MESFETs in each are operated under differing conditions in an attempt to establish the best conditions for harmonic generation.
引用
收藏
页码:108 / 110
相关论文
共 50 条
  • [1] EXAMINATION OF MILLIMETRE-WAVE FREQUENCY GAIN BEHAVIOR OF GAAS-MESFETS
    KROWNE, CM
    NEIDERT, RE
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1985, 58 (03) : 407 - 412
  • [2] EFFECTS OF DEEP LEVELS IN GaAs MESFETs.
    Zylbersztejn, A.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 44 - 49
  • [3] GaAs COMPOUNDS PROMISE LOWER NOISE MESFETs.
    Vaitkus, Rimantas L.
    Miers, Tom H.
    Microwaves New York, N.Y., 1982, 21 (03): : 91 - 94
  • [4] LOW NOISE AND HIGH POWER GaAs MESFETs.
    Nakatani, Masaaki
    Ohtsubo, Mutsuyuki
    Ishii, Takashi
    Denshi Tokyo/Electron Tokyo, 1979, (18): : 114 - 117
  • [5] THIN MBE GAAS MILLIMETRE-WAVE MIXER DIODE USING GE SUBSTRATE
    CHRISTOU, A
    DAVEY, JE
    COVINGTON, D
    ELECTRONICS LETTERS, 1982, 18 (09) : 367 - 368
  • [6] Effect of Surface Properties on Electrical Parameters of GaAs MESFETs.
    Sauvage, Didier
    Gueguen, Michele
    Simon, Bernard
    Annales des Telecommunications/Annals of Telecommunications, 1984, 40 (3-4): : 83 - 87
  • [7] GAAS AND INP PUNCHTHROUGH DIODES AS OSCILLATORS IN THE MILLIMETRE-WAVE RANGE
    VANOVERSCHELDE, A
    SALMER, G
    IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (04): : 94 - 98
  • [8] An integrated ASV frequency tripler for millimetre-wave applications
    Krach, M
    Freyer, J
    Claassen, M
    33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2003, : 1279 - 1281
  • [9] Millimetre-wave reflectometer
    Appleby, R
    Leeks-Musselwhite, M
    INFRARED AND PASSIVE MILLIMETER-WAVE IMAGING SYSTEMS: DESIGN, ANALYSIS, MODELING, AND TESTING, 2002, 4719 : 402 - 408
  • [10] MILLIMETRE-WAVE ACTIVE PROBE FREQUENCY-MULTIPLIER FOR ON-WAFER CHARACTERIZATION OF GAAS DEVICES AND ICS
    MAJIDIAHY, R
    BLOOM, DM
    ELECTRONICS LETTERS, 1989, 25 (01) : 6 - 8