DISTRIBUTION OF EL2 AND DISLOCATION AND THEIR CORRELATION IN SI-GaAs.

被引：0
|
作者：
Yang, Rui-Xia [1 ]
Li, Guang-Ping [1 ]
Hua, Qing-Heng [1 ]
机构：
[1] Hebei Inst of Technology, China, Hebei Inst of Technology, China
来源：
Xiyou jinshu | 1988年 / 7卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：46 / 50
相关论文
共 50 条
  • [41] GENERATION KINETICS OF EL2 CENTERS IN GAAS
    SUEZAWA, M
    SUMINO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L18 - L20
  • [42] MICROSCOPIC MODEL OF THE EL2 LEVEL IN GAAS
    LAGOWSKI, J
    KAMINSKA, M
    PARSEY, JM
    GATOS, HC
    WALUKIEWICZ, W
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 41 - 48
  • [43] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS
    WAGER, JF
    VANVECHTEN, JA
    PHYSICAL REVIEW B, 1987, 35 (05) : 2330 - 2339
  • [44] EL2 degree DISTRIBUTION IN THE VICINITY OF DISLOCATIONS IN GaAs-In MATERIALS.
    Fillard, Jp.
    Gall, P.
    Asgarinia, M.
    Castagne, M.
    Baroudi, M.
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (05): : 899 - 902
  • [45] THEORY OF EL2 AND EL5 FORMATION IN MELT-GROWN GAAS-SI
    MORROW, RA
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3843 - 3845
  • [46] IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS
    VONBARDELEBEN, HJ
    STIEVENARD, D
    DERESMES, D
    HUBER, A
    BOURGOIN, JC
    PHYSICAL REVIEW B, 1986, 34 (10): : 7192 - 7202
  • [47] STRAIN MODEL FOR EL2 IN GaAs.
    Zou Yuan-xi
    Xi You Jin Shu/Rare Metals, 1986, 5 (04): : 241 - 243
  • [48] ON THE PHYSICAL ORIGINS OF THE EL2 CENTER IN GAAS
    WANG, WL
    LI, SS
    LEE, DH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) : 196 - 199
  • [49] THE EL2 CENTER IN GAAS - SYMMETRY AND METASTABILITY
    BAGRAEV, NT
    JOURNAL DE PHYSIQUE I, 1991, 1 (10): : 1511 - 1527
  • [50] PROPERTIES OF EL2 IN GAAS AND GAAS1-XPX
    SAMUELSON, L
    PHYSICA B & C, 1984, 127 (1-3): : 104 - 111
12345