DISTRIBUTION OF EL2 AND DISLOCATION AND THEIR CORRELATION IN SI-GaAs.

被引:0
|
作者
Yang, Rui-Xia [1 ]
Li, Guang-Ping [1 ]
Hua, Qing-Heng [1 ]
机构
[1] Hebei Inst of Technology, China, Hebei Inst of Technology, China
来源
Xiyou jinshu | 1988年 / 7卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:46 / 50
相关论文
共 50 条
  • [21] A study of annealing behavior of EL2 and EL6 groups in SI-GaAs
    Wu, FM
    Zhao, ZY
    COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 269 - 274
  • [22] Spatial distribution of EL2 in GaAs wafer determined by photoacoustic spectroscopy
    Fukuyama, Atsuhiko
    Ikari, Tetsuo
    Maeda, Kouji
    Futagami, Koji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (5 B): : 2567 - 2569
  • [23] DISTRIBUTION OF THE MAIN ELECTRON TRAP EL2 IN UNDOPED LEC GAAS
    HASEGAWA, F
    IWATA, N
    YAMAMOTO, N
    NANNICHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L502 - L504
  • [24] Thermal stability of EL2 in GaAs
    Boddaert, X., 1600, (B3):
  • [25] On the energy level of EL2 in GaAs
    Look, DC
    Fang, ZQ
    SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1317 - 1319
  • [26] Relation between EL2 Groupand EL6 Group in SI-GaAs
    吴凤美
    赵周英
    RAREMETALS, 1996, (03) : 191 - 195
  • [27] Spatial Distribution of EL2 Defect in Semi-insulating GaAs
    汝琼娜
    李光平
    何秀坤
    RAREMETALS, 1994, (04) : 296 - 298
  • [28] RELATIONSHIP BETWEEN THE CONCENTRATION OF DEEP EL2 CENTERS AND DISLOCATION DENSITY IN SEMIINSULATING GAAS
    KARTAVYKH, AV
    MARKOV, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1074 - 1075
  • [29] ATOMIC MODEL AND ITS EXPERIMENTAL IDENTIFICATION FOR EL2 IN SI-GAAS
    LI, GP
    HE, XK
    WANG, Q
    YAN, P
    LI, XB
    RU, QN
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 349 - 353
  • [30] IMAGE-ANALYSIS OF EL2 DISTRIBUTIONS IN LEC GAAS SI MATERIALS
    FILLARD, JP
    MONTGOMERY, P
    BAROUDI, A
    BONNAFE, J
    GALL, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02): : L258 - L259