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LASER ANNEALING OF IMPLANTED SILICON.
被引：0
作者：
Kutukova, O.G.
Strel'tsov, L.N.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov)
|
1976年
/
10卷
/
03期
关键词：
D O I：
暂无
中图分类号：
TM2 [电工材料];
TN [电子技术、通信技术];
学科分类号：
0805 ;
080502 ;
080801 ;
0809 ;
摘要：
A determination was made of the effective properties of silicon layers implantation-doped with 40 keV B** plus and P** plus ions and annealed by high-power ruby laser radiation pulses. In the case of low ion doses, this laser annealing was equivalent to thermal annealing at 900 degree C applied for 3 min. An analysis of the short-circuit current spectra of photoelectric converters made of implanted and laser-annealed layers demonstrated that such annealing had no significant influence on the minority-carrier lifetime in the underlying original material.
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页码：265 / 267
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