INFLUENCE OF A STRONG ELECTROMAGNETIC WAVE ON THE QUASIENERGY SPECTRUM OF A SEMICONDUCTOR.

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作者：

Epshtein, E.M.

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Soviet physics. Semiconductors | 1981年 / 15卷 / 02期

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摘要：

A model of two parabolic bands is utilized to consider a semiconductor subjected to two intense electromagnetic waves, one of which produces intervand transitions (allowed for in a resonance approximation) and the other, whose frequency is low compared with the band gap, produces only intraband carrier motion. The quasienergy spectrum is calculated. The ″intraband″ wave gives rise to a system of band gaps whose widths oscillate with the wave amplitude. The width of a given band gap may depend nonmonotonically on its serial number.

引用

页码：182 / 183

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