Lattice strain and defect structure of GaAs/native oxide interfaces

被引:0
|
作者
机构
来源
| 1600年 / Publ by Pergamon Press Inc, Tarrytown, NY, USA卷 / 35期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1 / 4
相关论文
共 50 条
  • [31] EVALUATION OF ULTRATHIN NATIVE OXIDE ON GAAS SURFACE
    SAKAI, I
    HIROSE, M
    OSAKA, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 713 - 716
  • [32] STRUCTURE AND COMPOSITION OF NATIVE OXIDES ON GAAS
    SEALY, BJ
    HEMMENT, PLF
    THIN SOLID FILMS, 1974, 22 (03) : S39 - S43
  • [33] STRUCTURE AND CHEMICAL BONDING AT THE INTERFACES GAAS/SI AND GAAS/GE
    HUONG, PV
    LEYCURAS, A
    THIN SOLID FILMS, 1990, 184 : 423 - 428
  • [34] Ripples, Strain, and Misfit Dislocations: Structure of Graphene-Boron Nitride Super lattice Interfaces
    Nandwana, Dinkar
    Ertekin, Elif
    NANO LETTERS, 2015, 15 (03) : 1468 - 1475
  • [35] LATTICE STRUCTURE AT ZNSE-GAAS HETEROJUNCTION INTERFACES PREPARED BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
    PONCE, FA
    STUTIUS, W
    WERTHEN, JG
    THIN SOLID FILMS, 1983, 104 (1-2) : 133 - 143
  • [36] Lattice dynamics of epitaxial strain-free interfaces
    Kalt, J.
    Sternik, M.
    Sergueev, I
    Herfort, J.
    Jenichen, B.
    Wille, H-C
    Sikora, O.
    Piekarz, P.
    Parlinski, K.
    Baumbach, T.
    Stankov, S.
    PHYSICAL REVIEW B, 2018, 98 (12)
  • [37] Symmetry and native structure in lattice proteins
    Kellman, ME
    JOURNAL OF CHEMICAL PHYSICS, 1996, 105 (06): : 2500 - 2508
  • [38] Amphoteric native defect reactions in Si-doped GaAs
    Ky, N
    Reinhart, FK
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 718 - 724
  • [39] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS - COMMENT
    HURLE, DTJ
    PHYSICAL REVIEW B, 1989, 39 (11): : 8005 - 8005
  • [40] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS - REPLY
    BARAFF, GA
    SCHLUTER, M
    PHYSICAL REVIEW B, 1989, 39 (11): : 8006 - 8006