Lattice strain and defect structure of GaAs/native oxide interfaces

被引:0
|
作者
机构
来源
| 1600年 / Publ by Pergamon Press Inc, Tarrytown, NY, USA卷 / 35期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1 / 4
相关论文
共 50 条
  • [21] Electronic structure at the PTCDA/GaAs and NTCDA/GaAs interfaces
    Komolov, SA
    Aliaev, YG
    Potyupkin, NV
    Buzin, IS
    TECHNICAL PHYSICS, 2005, 50 (02) : 213 - 216
  • [22] DEFECT STRAIN FIELDS IN EPITAXIAL GaAs.
    Wie, C.R.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B24-25 (pt 1 Apr III) : 562 - 564
  • [23] Oxide phases with a defect oxygen lattice
    Sillen, LG
    Aurivillius, B
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1939, 101 (06): : 483 - 495
  • [24] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS
    BARAFF, GA
    SCHLUTER, M
    PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348
  • [25] Exercising control over the influence of the lattice misfit on the structure of oxide-oxide thin film interfaces
    Sayle, DC
    Maicaneanu, SA
    Slater, B
    Catlow, CRA
    JOURNAL OF MATERIALS CHEMISTRY, 1999, 9 (11) : 2779 - 2787
  • [26] Screening of Oxide/GaAs Interfaces for MOSFET Applications
    Passlack, M.
    Droopad, R.
    Yu, Z.
    Medendorp, N.
    Braddock, D.
    Wang, X. W.
    Ma, T. P.
    Buyuklimanli, T.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) : 1181 - 1183
  • [27] XAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces
    Cheong, SK
    Bunker, BA
    Hall, DC
    Snider, GL
    Barrios, PJ
    JOURNAL OF SYNCHROTRON RADIATION, 2001, 8 : 824 - 826
  • [28] DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY OF DEFECTS AT NATIVE OXIDE-GAAS INTERFACES OF (111) AND (100) ORIENTATIONS
    NARSALE, AM
    ARORA, BM
    SURFACE SCIENCE, 1984, 143 (2-3) : L417 - L420
  • [29] Asymmetric Lattice Disorder Induced at Oxide Interfaces
    Spurgeon, Steven R.
    Kaspar, Tiffany C.
    Shutthanandan, Vaithiyalingam
    Gigax, Jonathan
    Shao, Lin
    Sassi, Michel
    ADVANCED MATERIALS INTERFACES, 2020, 7 (08)
  • [30] Accurate determination of charge transition levels of the As-As dimer defect at GaAs/oxide interfaces through hybrid functionals
    Miceli, Giacomo
    Pasquarello, Alfredo
    APPLIED PHYSICS LETTERS, 2013, 103 (04)