CARRIER LIFETIME IN ELECTRON-IRRADIATED p-TYPE Hg1 - xCdxTe CRYSTALS.

被引:0
|
作者
Voitsekhovskii, A.V.
Kokhanenko, A.P.
Lilenko, Yu.V.
Petrov, A.S.
机构
来源
Soviet physics. Semiconductors | 1981年 / 15卷 / 04期
关键词
622 Radioactive Materials - 701 Electricity and Magnetism - 712 Electronic and Thermionic Materials - 931 Classical Physics; Quantum Theory; Relativity - 932 High Energy Physics; Nuclear Physics; Plasma Physics;
D O I
暂无
中图分类号
学科分类号
摘要
13
引用
收藏
页码:386 / 388
相关论文
共 50 条
  • [41] Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Doping Concentration
    Justin Easley
    Erdem Arkun
    Boya Cui
    Michael Carmody
    Lintao Peng
    Matthew Grayson
    Jamie Phillips
    Journal of Electronic Materials, 2018, 47 : 5699 - 5704
  • [42] A NEW ESR SIGNAL OF INTRINSIC DEFECTS IN ELECTRON-IRRADIATED P-TYPE GAAS
    JIA, YQ
    VONBARDELEBEN, HJ
    PHYSICS LETTERS A, 1993, 178 (1-2) : 205 - 208
  • [43] P-type as-doping of Hg1-xCdxTe grown by MOMBE
    Zhang, LH
    Pearson, SD
    Tong, W
    Wagner, BK
    Benson, JD
    Summers, CJ
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 600 - 604
  • [44] On the kinetics of the activation of arsenic as a p-type dopant in Hg1-xCdxTe
    Schaake, HF
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (06) : 789 - 793
  • [45] Effect of Ionized Intrinsic Point Defects on the Carrier Concentration in Hg1 - xCdxTe.
    Lutsiv, R.V.
    Petrov, P.P.
    Rud', N.A.
    Matviiv, M.V.
    Sol'skii, I.M.
    Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, 1976, 12 (05): : 830 - 834
  • [46] INTERFACE OF P-TYPE HG1-XCDXTE PASSIVATED WITH NATIVE SULFIDES
    NEMIROVSKY, Y
    BURSTEIN, L
    KIDRON, I
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 366 - 373
  • [47] GENERATION-RECOMBINATION CENTERS IN P-TYPE HG1-XCDXTE
    JONES, CE
    NAIR, V
    POLLA, DL
    APPLIED PHYSICS LETTERS, 1981, 39 (03) : 248 - 250
  • [48] DEFECT RELATED ABSORPTION IN P-TYPE HG1-XCDXTE ALLOYS
    HUANG, CH
    YU, ZZ
    TANG, DY
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01): : 273 - 280
  • [49] STUDIES OF AU OHMIC CONTACTS TO P-TYPE HG1-XCDXTE
    KRISHNAMURTHY, V
    SIMMONS, A
    HELMS, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1147 - 1151
  • [50] MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION
    ARIAS, JM
    SHIN, SH
    GERTNER, ER
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 362 - 366