High quality In0.15Ga0.85As/AlxGa1-xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy

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[41]   INCORPORATION OF CARBON IN HEAVILY DOPED ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
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FISCHER, DW ;
TALWAR, DN .
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CARTER, J ;
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Ohno, Y ;
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