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High quality In0.15Ga0.85As/AlxGa1-xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy
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共 50 条
[31]
Carbon doping and etching of AlxGa1-xAs (0<=x<=1) with carbon tetrachloride in metalorganic vapor phase epitaxy
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0
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0
机构:
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KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN
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KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN
KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN
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机构:
KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN
KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN
SANO, N
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GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
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