Temperature dependent transient leakage currents in amorphous silicon thin film transistors

被引：0

作者：

Lemmi, F. ^{[1
]}

Street, R.A. ^{[1
]}

机构：

[1] Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, United States

来源：

Materials Research Society Symposium - Proceedings | 1999年 / 557卷

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D O I：

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摘要：

引用

页码：671 / 676

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