Incorporation of Mg in GaN grown by molecular beam epitaxy

被引:0
|
作者
Univ of Nottingham, Nottingham, United Kingdom [1 ]
机构
来源
J Cryst Growth | / 1-2卷 / 7-11期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy
    Kim, H
    Andersson, TG
    Chauveau, JM
    Trampert, A
    SOLID-STATE ELECTRONICS, 2003, 47 (03) : 539 - 542
  • [32] Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy
    Pastor, D
    Cuscó, R
    Artús, L
    Naranjo, F
    Calleja, E
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 485 - 490
  • [33] Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy
    Popovici, G
    Xu, GY
    Botchkarev, A
    Kim, W
    Tang, H
    Salvador, A
    Morkoc, H
    Strange, R
    White, JO
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 4020 - 4023
  • [34] Mg-doped p-type GaN grown by reactive molecular beam epitaxy
    Kim, W
    Salvador, A
    Botchkarev, AE
    Aktas, O
    Mohammad, SN
    Morcoc, H
    APPLIED PHYSICS LETTERS, 1996, 69 (04) : 559 - 561
  • [35] Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy
    Hurni, Christophe A.
    Lang, Jordan R.
    Burke, Peter G.
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2012, 101 (10)
  • [36] Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
    Smorchkova, IP
    Haus, E
    Heying, B
    Kozodoy, P
    Fini, P
    Ibbetson, JP
    Keller, S
    DenBaars, SP
    Speck, JS
    Mishra, UK
    APPLIED PHYSICS LETTERS, 2000, 76 (06) : 718 - 720
  • [37] Arsenic incorporation in GaN during growth by molecular beam epitaxy
    Foxon, CT
    Novikov, SV
    Li, T
    Campion, RP
    Winser, AJ
    Harrison, I
    Kappers, MJ
    Humphreys, CJ
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 510 - 514
  • [38] Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy
    Zhao, Q. X.
    Wang, S. M.
    Sadeghi, M.
    Larsson, A.
    Friesel, M.
    Willander, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [39] Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy
    Lubyshev, DI
    Cai, WZ
    Catchen, GL
    Mayer, TS
    Miller, DL
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 125 - 130
  • [40] Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy
    Lubyshev, DI
    Cai, WZ
    Catchen, GL
    Mayer, TS
    Miller, DL
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 125 - 130