Bistable diodes grown by silicon molecular beam epitaxy

被引：0

作者：

Zhu, Xuegen ^{[1
]}

Zheng, Xinyu ^{[1
]}

Pak, Mike ^{[1
]}

Tanner, Martin O. ^{[1
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ of California, Los Angeles, United States

来源：

Thin Solid Films | 1998年 / 321卷

关键词：

Current voltage characteristics - Electron tunneling - Molecular beam epitaxy - Semiconducting silicon - Semiconductor doping - Semiconductor growth - Thermal effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V bistability phenomenon was observed in those devices. We used a `band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.

引用

页码：201 / 205