EFFECT OF 1. 3 Mev ELECTRON RADIATION ON Al-SiO2-Si(n) SYSTEM.

被引：0

作者：

Bao Zongming

Zhang Xiumiao

Yang Hengqing

Zhang Zengguang

机构：

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1983年 / 4卷 / 01期

关键词：

BULK LIFETIME - GENERATION LIFETIME;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of 1. 3 Mev electron radiation on Al-SiO//2-Si(n) system has been observed. The results show that, after electron irradiation and proper annealing, the bulk lifetime decreases significantly, while the generation lifetime near the surface increases and the flat band voltage, surface state density and surface generation velocity decrease.

引用

页码：64 / 68