Study of the Si(111)√3×√3-Sb structure by x-ray diffraction

被引：0
|
作者：
Nakatani, Shinichiro [1 ]
Saito, Akira [1 ]
Kuwahara, Yuji [1 ]
Takahashi, Toshio [1 ]
Aono, Masakazu [1 ]
Kikuta, Seishi [1 ]
机构：
[1] Univ of Tokyo, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 4 A期
关键词：
Semiconducting Silicon;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：426 / 428
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