Role of defect excesses in damage formation in Si during ion implantation at elevated temperature

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作者：
Holland, O.W. [1 ]
Budai, J.D. [1 ]
Nielsen, Bent [1 ]
机构：
[1] Oak Ridge Natl Lab, Oak Ridge, United States
来源：
Materials Science and Engineering A | 1998年 / A253卷 / 1-2期
关键词：
Number:; DE-AC02-76CH00016; Acronym:; -; Sponsor:; DE-AC05-96OR22464; USDOE; Sponsor: U.S. Department of Energy; DMSE; Sponsor: Division of Materials Sciences and Engineering;
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页码：240 / 248
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