Selective wet etching of a GaAs/AlxGa1-xAs heterostructure with citric acid - hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1-xAs/InyGa1-yAs heterojunction field effect transistor fabrication

被引：0

作者：

Lee, H.J. ^{[1
]}

Tse, M.S. ^{[1
]}

Radhakrishnan, K. ^{[1
]}

Prasad, K. ^{[1
]}

Weng, J. ^{[1
]}

Yoon, S.F. ^{[1
]}

Zhou, X. ^{[1
]}

Tan, H.S. ^{[1
]}

Ting, S.K. ^{[1
]}

Leong, Y.C. ^{[1
]}

机构：

[1] Nanyang Technological Univ, Singapore, Singapore

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1995年 / B35卷 / 1-3期

关键词：

Citric acid - Gate recess etching - Heterojunction field effect transistors - Heterostructure - Selective wet etching;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The selective wet etching characteristics of GaAs/AlxGa1-xAs1-x systems in citric acid-hydrogen peroxide solution have been studied for x = 0.15, x = 0.2 and x = 0.3 respectively. A 4:1 ratio of citric acid (50% by weight)-H2O2 solution was found to be a better selective etchant than the more commonly used NH4OH-H2O2 solutions. The selectivity obtained was more than 110 for x = 0.3. The simple and reliable selective wet etchant was applied to the gate recess etching in the fabrication of pseudomorphic GaAs/AlxGa1-xAs/InyGa1-yAs heterojunction field effect transistors.

引用

页码：230 / 233