Characterization of an AlGaN/GaN two-dimensional electron gas structure

被引:0
|
作者
Saxler, A.
Debray, P.
Perrin, R.
Elhamri, S.
Mitchel, W.C.
Elsass, C.R.
Smorchkova, I.P.
Heying, B.
Haus, E.
Fini, P.
Ibbetson, J.P.
Keller, S.
Petroff, P.M.
DenBaars, S.P.
Mishra, U.K.
Speck, J.S.
机构
[1] Air Force Research Laboratory, Mat. and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, OH 45433-7707, United States
[2] College of Engineering, University of California, Santa Barbara, CA 93106, United States
[3] Serv. de Phys. de l'Etat Condense, Centre d'Etudes de Saclay, F-91191 Gif-sur-Yvette Cedex, France
[4] Department of Physics, University of Dayton, Dayton, OH 45469-2314, United States
来源
| 1600年 / American Institute of Physics Inc.卷 / 87期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
23
引用
收藏
相关论文
共 50 条
  • [41] Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas
    Department of Physics, Lanzhou University, Lanzhou 730000, China
    不详
    不详
    Wuli Xuebao, 2006, 5 (2498-2503):
  • [42] The transport property of two dimensional electron gas in AlGaN/AIN/GaN structure
    Zhou Zhong-Tang
    Guo Li-Wei
    Xing Zhi-Gang
    Ding Guo-Jian
    Tan Chang-Lin
    Lu Li
    Liu Jian
    Liu Xin-Yu
    Jia Hai-Qiang
    Chen Hong
    Zhou Jun-Ming
    ACTA PHYSICA SINICA, 2007, 56 (10) : 6013 - 6018
  • [43] Two-dimensional electron dynamics in GaN/AlGaN heterostructures
    Vitusevich, SA
    Danylyuk, SV
    Klein, N
    Petrychuk, MV
    Avksentyev, AY
    Sokolov, VN
    Kochelap, VA
    Belyaev, AE
    Tilak, V
    Smart, J
    Vertiatchikh, A
    Eastman, LF
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 401 - 404
  • [44] Two-dimensional electron transport in AlGaN/GaN heterostructures
    Tan, Ren-Bing
    Xu, Wen
    Zhou, Yu
    Zhang, Xiao-Yu
    Qin, Hua
    PHYSICA B-CONDENSED MATTER, 2012, 407 (21) : 4277 - 4280
  • [45] Electronic structure of dynamically two-dimensional hole gas in AlGaN/GaN heterostructures
    Sutandi, A
    Ruden, PP
    Brennan, KF
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) : 3435 - 3443
  • [46] Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
    Douara, Abdelmalek
    Djellouli, Bouaza
    Abid, Hamza
    Rabehi, Abdelaziz
    Ziane, Abderrezzaq
    Mostefaoui, Mohammed
    Ben Toumi, Ahmed
    Dif, Naas
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2019, 32 (02)
  • [47] Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
    Kong, YC
    Chu, RM
    Zheng, YD
    Zhou, CH
    Shen, B
    Gu, SL
    Zhang, R
    Han, P
    Shi, Y
    Jiang, RL
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (05): : 1018 - 1023
  • [48] The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
    张金风
    毛维
    张进城
    郝跃
    Chinese Physics B, 2008, (07) : 2689 - 2695
  • [49] Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors
    Chu, RM
    Zhou, YG
    Zheng, YD
    Han, P
    Shen, B
    Gu, SL
    APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2270 - 2272
  • [50] Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
    Brueckner, K.
    Niebelschuetz, F.
    Tonisch, K.
    Michael, S.
    Dadgar, A.
    Krost, A.
    Cimalla, V.
    Ambacher, O.
    Stephan, R.
    Hein, M. A.
    APPLIED PHYSICS LETTERS, 2008, 93 (17)