Characterization of an AlGaN/GaN two-dimensional electron gas structure

被引:0
|
作者
Saxler, A.
Debray, P.
Perrin, R.
Elhamri, S.
Mitchel, W.C.
Elsass, C.R.
Smorchkova, I.P.
Heying, B.
Haus, E.
Fini, P.
Ibbetson, J.P.
Keller, S.
Petroff, P.M.
DenBaars, S.P.
Mishra, U.K.
Speck, J.S.
机构
[1] Air Force Research Laboratory, Mat. and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, OH 45433-7707, United States
[2] College of Engineering, University of California, Santa Barbara, CA 93106, United States
[3] Serv. de Phys. de l'Etat Condense, Centre d'Etudes de Saclay, F-91191 Gif-sur-Yvette Cedex, France
[4] Department of Physics, University of Dayton, Dayton, OH 45469-2314, United States
来源
| 1600年 / American Institute of Physics Inc.卷 / 87期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
23
引用
收藏
相关论文
共 50 条
  • [31] Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence
    Popok, Vladimir N.
    Caban, Piotr A.
    Michalowski, Pawel Piotr
    Thorpe, Ryan
    Feldman, Leonard C.
    Pedersen, Kjeld
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (11)
  • [32] Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures
    Zhang Ming-Lan
    Wang Xiao-Liang
    Xiao Hong-Ling
    Wang Cui-Mei
    Ran Jun-Xue
    Hu Guo-Xin
    CHINESE PHYSICS LETTERS, 2008, 25 (03) : 1045 - 1048
  • [33] Prolonged kinetics of photoluminescence of two-dimensional electron gas in AlGaN/GaN heterostructure
    Shamirzaev, T. S.
    Korzhavina, N. S.
    Mansurov, V. G.
    Preobrazhenskii, V. V.
    Zhuravlev, K. S.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2095 - 2098
  • [34] Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction
    Raymond, A
    Juillaguet, S
    Couzinet, B
    Mezouar, IEL
    KamalSaadi, A
    Khan, MA
    Chen, Q
    Yang, JW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 211 - 214
  • [35] Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
    Ma Xiao-Hua
    Ma Ping
    Jiao Ying
    Yang Li-Yuan
    Ma Ji-Gang
    He Qiang
    Jiao Sha-Sha
    Zhang Jin-Cheng
    Hao Yue
    CHINESE PHYSICS B, 2011, 20 (09)
  • [36] Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas
    Lin, D. Y.
    Wu, J. D.
    Hung, C. C.
    Lu, C. T.
    Huang, Y. S.
    Liang, C. -T.
    Chen, N. C.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01) : 125 - 129
  • [37] Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure
    Park, YS
    Na, JH
    Lee, HS
    Kim, HJ
    Park, CM
    Choi, SW
    Fu, DJ
    Kang, TW
    Oh, JE
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (05) : 743 - 746
  • [38] Effect of strain on the effective mass of GaN and the mobility of AlGaN/GaN two-dimensional electron gas
    Cao, Yuelong
    Guan, Qi
    Jia, Wanli
    Wang, Xinmei
    Zhang, Lin
    He, Yang
    Li, Enling
    MATERIALS TODAY COMMUNICATIONS, 2023, 35
  • [39] Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
    Buchheim, C.
    Goldhahn, R.
    Gobsch, G.
    Tonisch, K.
    Cimalla, V.
    Niebelschuetz, F.
    Ambacher, O.
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [40] Contactless electroreflectance and piezoreflectance of a two-dimensional electron gas at a GaN/AlGaN heterointerface
    Lin, DY
    Huang, YS
    Chen, YF
    Tiong, KK
    SOLID STATE COMMUNICATIONS, 1998, 107 (10) : 533 - 536