Assessment of Deep Levels in the Active Layers of GaAs Field Effect Transistors.

被引:0
|
作者
Meignant, Didier
Mitonneau, Andre
机构
来源
Acta electronica Paris | 1980年 / 23卷 / 01期
关键词
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTING GALLIUM COMPOUNDS
引用
收藏
页码:81 / 90
相关论文
共 50 条
  • [21] HIGH-FIELD FILLING OF DEEP LEVELS IN HETEROSTRUCTURE (ALGAAS/GAAS) FIELD-EFFECT TRANSISTORS WITH MODULATED DOPING
    MALTSEV, SV
    PRINTS, VY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (12): : 1197 - 1198
  • [22] Measurement of cellular signals with chemical sensitive field effect transistors.
    Baumann, WH
    Lehmann, M
    Ehret, R
    Brischwein, M
    Wolf, B
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 51 - BTEC
  • [23] Measurement Methods of Leakage Current in Field-Effect Transistors.
    Grabowski, Wojciech
    Elektronika, 1973, 14 (03): : 103 - 108
  • [24] Deep levels in ion implanted field effect transistors on SiC
    Mitra, S
    Rao, MV
    Jones, K
    Papanicolaou, N
    Wilson, S
    SOLID-STATE ELECTRONICS, 2003, 47 (02) : 193 - 198
  • [25] Deep levels in ion implanted field effect transistors on SiC
    Mitra, S
    Rao, MV
    Jones, K
    Wang, XW
    Papanicolaou, N
    Wilson, S
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 21 - 24
  • [26] RESONANT DRIVE CIRCUIT FOR POWER FIELD-EFFECT TRANSISTORS.
    Driscoll, C.D.
    Waechter, M.
    IBM technical disclosure bulletin, 1983, 26 (3 B): : 1637 - 1638
  • [27] GERMANIUM ION-SELECTIVE FIELD-EFFECT TRANSISTORS.
    Vlasov, Yu.G.
    Letavin, V.P.
    Tarantov, Yu.A.
    1600, (58):
  • [28] GAAS FIELD-EFFECT TRANSISTORS
    STERZER, F
    MICROWAVE JOURNAL, 1978, 21 (11) : 73 - 77
  • [29] GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS
    NAKAI, K
    KITAHARA, K
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1635 - 1640
  • [30] GAMMA-INDUCED LEAKAGE IN JUNCTION FIELD-EFFECT TRANSISTORS.
    Allen, Douglas J.
    Coppage, Floyd N.
    Hash, Gerald L.
    Holck, Donald K.
    Wrobel, Theodore F.
    IEEE Transactions on Nuclear Science, 1984, NS-31 (06) : 1487 - 1491