Chemical design and thin film preparation of p-type conductive transparent oxides

被引：3

作者：

Yanagi, Hiroshi ^{[1
]}

Kawazoe, Hiroshi ^{[1
]}

Kudo, Atsushi ^{[1
]}

Yasukawa, Masahiro ^{[1
]}

Hosono, Hideo ^{[1
]}

机构：

[1] Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatuta, Midori-ku, Yokohama 226-8503, Japan

来源：

Journal of Electroceramics | 2000年 / 4卷 / 02期

关键词：

Activation energy - Conductive materials - Copper compounds - Electric conductivity - Energy gap - Film preparation - Fused silica - Oxides - Seebeck effect - Sputtering - Synthesis (chemical) - Temperature;

D O I：

10.1023/a:1009959920435

中图分类号：

学科分类号：

摘要：

Chemical design to find a new transparent conductive oxide having p-type conductivity has been proposed. Following the chemical design, we have selected CuGaO2 and CuAlO2 as candidate materials. CuGaO2 thin films were prepared on silica glass substrates by RF sputtering method. The optical band gap of the film was estimated to be approx. 3.4 eV. Positive sign of Seebeck coefficient demonstrated the p-type conductivity of the film. The dc conductivity of the film was 5.6 × 10-3 S · cm-1 and the activation energy was 0.22 eV at room temperature. Because of rough texture of the film, the observed conductivity was not an intrinsic property of the material. Further, CuAlO2 thin films were prepared by laser ablation. The film deposited in O2 atmosphere of 1.3 Pa at 690°C showed higher optical transmission in visible and near-infrared regions than previously reported. Contribution of Cu 3d components to upper edge of valence band in CuGaO2 and CuAlO2 were confirmed by photoemission spectroscopic measurements.

引用

页码：407 / 414