ELECTRON BEAM IRRADIATION EFFECTS ON MOS-TRANSISTORS AND ITS SIGNIFICANCE TO E-BEAM TESTING.

被引：0
|
作者：
Ranasinghe, D.W. [1 ]
Machin, D.J. [1 ]
Proctor, G. [1 ]
机构：
[1] British Telecom Research Lab plc, Ipswich, Engl, British Telecom Research Lab plc, Ipswich, Engl
来源：
Microelectronic Engineering | 1987年 / 7卷 / 2-4期
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摘要：
14
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页码：397 / 403
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