ELECTRON RELAXATION PROPERTIES AND TRANSIENT SPECTROSCOPY OF HYDROGENATED AMORPHOUS SILICON.

被引：0
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作者：
Han, R.Q. [1 ]
Tua, P.F. [1 ]
Ruvalds, J. [1 ]
Ngai, K.L. [1 ]
机构：
[1] Univ of Virginia, Charlottesville,, VA, USA, Univ of Virginia, Charlottesville, VA, USA
来源：
| 1600年 / 26期
关键词：
DEEP-LEVEL-TRANSIENT-SPECTROSCOPY - ELECTRON RELAXATION PROPERTIES - HYDROGENATED AMORPHOUS SILICON;
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(Edited Abstract)
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