Study on the field plate termination technology of high-voltage VDMOS

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作者：

Wu, Zhengyuan

Zhang, Shuo

Dong, Xiaomin

Yu, Jun

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来源：

Huazhong Ligong Daxue Xuebao/Journal Huazhong (Central China) University of Science and Technology | / 27卷 / 06期

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摘要：

The MIS model was proposed to design the multi-step field plates structure of the VDMOS device. The MIS model was amended by the means of two-dimensional numerical computing. The technology of multi-layer wiring was introduced for the first time to form the multi-step field plates with polymide and SiO2 compound medium layer. In our experiments, the blocking voltage in VDMOS devices was improved and high above 700 V.

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页码：43 / 45