OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GaAs.

被引：0

作者：

Jimenez, J. ^{[1
]}

Gonzalez, M.A. ^{[1
]}

Hernandez, P. ^{[1
]}

de Saja, J.A. ^{[1
]}

Bonnafe, J. ^{[1
]}

机构：

[1] Univ de Valladolid, Lab de Fisica, del Estado Solido, Valladolid, Spain, Univ de Valladolid, Lab de Fisica del Estado Solido, Valladolid, Spain

来源：

| 1600年 / 57期

关键词：

ELECTRIC PROPERTIES - INTEGRATED CIRCUITS - PHOTOCONDUCTIVITY - PHOTONS;

D O I：

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学科分类号：

摘要：

The authors investigate in this paper a photomemory effect in the photocurrent of semi-insulating GaAs when it is illuminated with photons ranging from 1 to 1. 35 ev. They observe a strong enhancement of the photocurrent after long excitation with those photons, which is thermally quenched between 123 and 135 K. They explain this phenomenon by a defect reaction, dealing with the association of two or more complex defects, as a result of the electrostatic interaction between the original defects when their charge state is changed by means of the illumination. The formation of this complex drives the sample into a high-sensitivity state, which they called 'on-state'. The dissociation of the photogenerated complex defect, due to thermal emission of electrons to the conduction band, restores the crystal into its normal photosensitivity state, which they have called 'off-state'.

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