Analytical calculations of intrinsic carrier concentration and effective state densities in strained Si1-xGex layers

被引：0
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作者：
Zhang, Wanrong [1 ]
Zeng, Zheng [1 ]
Luo, Jinsheng [1 ]
机构：
[1] Xi'an Jiaotong Univ, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1996年 / 16卷 / 04期
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摘要：
14
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页码：314 / 318
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