Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

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作者：
Kaneko, Tomoya
Tanji, Koki
Amamiya, Yasushi
Niwa, Takaki
Shimawaki, Hidenori
Tanaka, Shinichi
Wada, Kenzo
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来源：
| 2000年 / NEC Creative Ltd., Tokyo, Japan卷 / 41期
关键词：
Electric contacts - Frequency modulation - Heterojunction bipolar transistors - Millimeter wave devices - Monolithic microwave integrated circuits - Radio communication - Resonators - Semiconducting aluminum compounds - Semiconducting indium gallium arsenide - Semiconductor diodes - Varactors - Variable frequency oscillators;
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摘要：
A 38 GHz-band MMIC (Monolithic Microwave Integrated Circuit) VCO (Voltage Controlled Oscillator) has been developed for the millimeter wave radio communications systems, using the AlGaAs/InGaAs HBT (Hetero Bipolar Transistor). There are the p+/p re-grown base contact and several other technologies in fabrication process of HBT used for realizing low 1/f noise of the oscillation transistor. Furthermore, unique circuit technology to maximize the quality-factor of a resonator and a base-collector junction diode p-n varactor are designed for the low phase noise characteristics and the linear frequency modulation characteristics. The MMIC HBT VCO exhibit a phase noise of 85 dBc/Hz at 100 KHz off the carrier and a frequency modulation linearity of less than 3.6%p-p with the maximum frequency deviation of 37.5 MHz at 38 GHz band.
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