Ultrathin quasi-monocrystalline silicon films for electronic devices

被引：0

作者：

Inst. für Phys. Elektronik, Universität Stuttgart, Pfaffenwaldring 47, DE-70569 Stuttgart, Germany ^{[1
]}

机构：

来源：

Diffus Def Data Pt B | / 229-234期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling [J].

Beattie, Meghan N. ;

Hobson, David G. ;

Valdivia, Christopher E. ;

Hinzer, Karin ;

Bioud, Youcef A. ;

Boucherif, Abderraouf ;

Drouin, Dominique ;

Ares, Richard .

2017 PHOTONICS NORTH (PN), 2017,

[42] Thermal annealing of porous silicon to develop a quasi monocrystalline structure [J].

M. Banerjee ;

E. Bontempi ;

S. Bhattacharya ;

S. Maji ;

S. Basu ;

H. Saha .

Journal of Materials Science: Materials in Electronics, 2009, 20

[43] Thermal annealing of porous silicon to develop a quasi monocrystalline structure [J].

Banerjee, M. ;

Bontempi, E. ;

Bhattacharya, S. ;

Maji, S. ;

Basu, S. ;

Saha, H. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (04) :305-311

[44] Fabrication of highly oriented, smooth diamond films on silicon for electronic devices [J].

Wolter, SD ;

Borst, TH ;

Gluche, P ;

Ebert, W ;

Vescan, A ;

Kohn, E .

III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 :63-68

[45] Epitaxial ferroelectric thin films on silicon substrates for future electronic devices [J].

Kondo, M ;

Maruyama, K ;

Kurihara, K .

FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 2002, 38 (01) :46-53

[46] Electronic properties of microcrystalline silicon investigated by photoluminescence spectroscopy on films and devices [J].

Carius, R ;

Merdzhanova, T ;

Finger, F .

AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 :321-326

[47] Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy [J].

Miyazaki, S ;

Narasaki, M ;

Ogasawara, M ;

Hirose, M .

SOLID-STATE ELECTRONICS, 2002, 46 (11) :1679-1685

[48] Erratum to: “Electronic properties of ultrathin films based on pyrrolofullerene molecules on the surface of oxidized silicon” [J].

A. S. Komolov ;

E. F. Lazneva ;

N. B. Gerasimova ;

A. A. Gavrikov ;

A. E. Khlopov ;

S. N. Akhremchik ;

M. V. Zimina ;

Yu. A. Panina ;

A. V. Povolotskiy ;

A. S. Konev ;

A. F. Khlebnikov .

Physics of the Solid State, 2014, 56 :2366-2366

[49] Design of Tool for Exfoliation of Monocrystalline Microscale Silicon Films [J].

Ward, Martin ;

Cullinan, Michael .

JOURNAL OF MICRO AND NANO-MANUFACTURING, 2019, 7 (01)

[50] AZ nLOF Series of Photoresist Films on Monocrystalline Silicon [J].

Brinkevich, D.I. ;

Grinyuk, E.V. ;

Prosolovich, V.S. ;

Zubova, O.A. ;

Kolos, V.V. ;

Brinkevich, S.D. ;

Vabishchevich, S.A. .

Russian Microelectronics, 2025, 54 (01) :1-7

← 1 2 3 4 5 →