PHOTOMAGNETIC EFFECT IN Pb1 - xSnxTe AT LOW TEMPERATURES.

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Gasan-zade, S.G.
Orletskii, V.B.
Prokopchuk, L.F.
Sal'kov, E.A.
Shepel'skii, G.A.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1976年 / 10卷 / 12期
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Results of studying the photomagnetic emf and the photoconductivity in the Pb//1// minus //xSn//xTe at low temperatures by the lock-in detection method under weak photosignal conditions ( DELTA //n less than less than n) show that the photomagnetic current increased linearly with rising magnetic field and then reached saturation when this field reached a few kilooersteds. This was evidence of a high minority-carrier (hole) mobility at low temperatures; the dependences I//P//M(H) indicated that the surface recombination velocity s was low; the photomagnetic signal depended quite strongly on temperature and, at T equals 77 degree K, the samples exhibited practically no photomagnetic emf; and oscillations of the photomagnetic emf as a function of the magnetic field intensity were exhibited by some samples at 4. 2 degree K. These oscillations were clearly associated with the quantitation of the electron energy spectrum in a magnetic field.
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页码:1404 / 1405
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